Published December 1, 2014 | Version v1
Journal article

IC design of low power, wide tuning range VCO in 90 nm CMOS technology

  • 1. Institute of RF- and OE-ICs, Southeast University, Nanjing 210096 (China)

Description

A low power VCO with a wide tuning range and low phase noise has been designed and realized in a standard 90 nm CMOS technology. A newly proposed current-reuse cross-connected pair is utilized as a negative conductance generator to compensate the energy loss of the resonator. The supply current is reduced by half compared to that of the conventional LC-VCO. An improved inversion-mode MOSFET (IMOS) varactor is introduced to extend the capacitance tuning range from 32.8% to 66%. A detailed analysis of the proposed varactor is provided. The VCO achieves a tuning range of 27–32.5 GHz, exhibiting a frequency tuning range (FTR) of 18.4% and a phase noise of −101.38 dBc/Hz at 1 MHz offset from a 30 GHz carrier, and shows an excellent FOM of −185 dBc/Hz. With the voltage supply of 1.5 V, the core circuit of VCO draws only 2.1 mA DC current. (semiconductor integrated circuits)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/35/12/125013

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
35
Journal Issue
12
Journal Page Range
[6 p.]
ISSN
1674-4926