IC design of low power, wide tuning range VCO in 90 nm CMOS technology
Creators
- 1. Institute of RF- and OE-ICs, Southeast University, Nanjing 210096 (China)
Description
A low power VCO with a wide tuning range and low phase noise has been designed and realized in a standard 90 nm CMOS technology. A newly proposed current-reuse cross-connected pair is utilized as a negative conductance generator to compensate the energy loss of the resonator. The supply current is reduced by half compared to that of the conventional LC-VCO. An improved inversion-mode MOSFET (IMOS) varactor is introduced to extend the capacitance tuning range from 32.8% to 66%. A detailed analysis of the proposed varactor is provided. The VCO achieves a tuning range of 27–32.5 GHz, exhibiting a frequency tuning range (FTR) of 18.4% and a phase noise of −101.38 dBc/Hz at 1 MHz offset from a 30 GHz carrier, and shows an excellent FOM of −185 dBc/Hz. With the voltage supply of 1.5 V, the core circuit of VCO draws only 2.1 mA DC current. (semiconductor integrated circuits)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/35/12/125013Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 35
- Journal Issue
- 12
- Journal Page Range
- [6 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47014468
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- COMPARATIVE EVALUATIONS; CURRENTS; DESIGN; ELECTRIC POTENTIAL; ENERGY LOSSES; GHZ RANGE; INTEGRATED CIRCUITS; MHZ RANGE; MOSFET; NOISE; RESONATORS; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- ELECTRONIC CIRCUITS; ELECTRONIC EQUIPMENT; EQUIPMENT; EVALUATION; FIELD EFFECT TRANSISTORS; FREQUENCY RANGE; LOSSES; MATERIALS; MICROELECTRONIC CIRCUITS; MOS TRANSISTORS; SEMICONDUCTOR DEVICES; TRANSISTORS