Published April 1987 | Version v1
Journal article Metadata-only

Effect of defects induced by laser irradiation on photoluminescence of nitrogen-doped gallium phosphide

Creators

  • 1. Moskovskij Gosudarstvennyj Univ. (USSR)

Description

Influence of defects induced with laser irradiation on GaP photoluminescence spectra (PS) was investigated. Eximer laser radiations results in total drop of PS intensity 3-5 times during considerable spectrum deformation. It is believed that defects induced with laser irradiation are effective centers of radiationless recombination which conditions integral PS damping. Besides in a narrow (20-60 nm) near-surface layer the destruction of deformed nitrogen emitting centers responsible for background bands occurs

Additional details

Additional titles

Original title (Russian)
Влияние индуцированных лазерным облучением дефектов на фотолюминесценцию фосфида галлия с примесью азота

Publishing Information

Journal Title
Fiz. Tekh. Poluprovodn.
Journal Volume
21
Journal Issue
4
Series
Fiz. Tekh. Poluprovodn.
Journal Page Range
740-742
ISSN
0015-3222
CODEN
FTPPA

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
19010147
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CRYSTAL DEFECTS; CRYSTALS; FLUX DENSITY; GALLIUM PHOSPHIDES; LASER RADIATION; NITROGEN ADDITIONS; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; RADIATION FLUX; RECOMBINATION; SURFACES; TEMPERATURE DEPENDENCE; VERY LOW TEMPERATURE; VISIBLE SPECTRA
Descriptors DEC
CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; EMISSION; GALLIUM COMPOUNDS; LUMINESCENCE; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTON EMISSION; RADIATION EFFECTS; RADIATIONS; SPECTRA