High temperature oxidation of silicon nitride intergranular phases
- 1. Univ. of Dublin, Trinity Coll., College Green (Ireland)
- 2. CEC/JRC-IAM Petten, Petten (Netherlands)
Description
Rare earth oxides are used in the fabrication of dense silicon nitride (Si3N4) components. These oxides react at high temperatures with SiO2 (present on the surface of all commercial Si3N4 powders) to form a liquid phase which allows densification by particle rearrangement and solution-reprecipitation. The remaining liquid solidifies and a number of phases, both crystalline and glassy, form. The oxidation behaviour of the intergranular phase plays a significant role at temperatures below 1100 C as oxidation is often accompanied by molar volume increases. At these temperatures, Si3N4 itself is hardly oxidized. This paper deals with the oxidation of N-α-wollastonites (MSiO2N). Dense Y and Ce wollastonite (K-phase) were prepared by hot pressing and gas pressure sintering, respectively. Specimens were exposed to dry synthetic air and the reactions were monitored using Hot Stage Microscopy and Thermogravimetric Analysis. XRD and WDS were used to analyse the materials and oxidation products. (orig.)
Additional details
Publishing Information
- Publisher
- Trans Tech Publ.
- Imprint Place
- Aedermannsdorf (Switzerland)
- ISBN
- 0-87849-660-2
- Imprint Title
- Intergranular and interphase boundaries in materials (iib92)
- Imprint Pagination
- 839 p.
- Journal Volume
- 126-128
- Series
- Materials science forum.
- Journal Page Range
- p. 519-522.
- ISSN
- 0255-5476
- CODEN
- MSFOEP
Conference
- Title
- 6. international congress on intergranular and interphase boundaries in materials (IIB-6).
- Dates
- 21-26 Jun 1992.
- Place
- Thessaloniki (Greece).
INIS
- Country of Publication
- Switzerland
- Country of Input or Organization
- Switzerland
- INIS RN
- 25049201
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CERAMICS; FABRICATION; GRAIN BOUNDARIES; HOT PRESSING; OXIDATION; POWDERS; SILICON; SILICON NITRIDES; SILICON OXIDES; SINTERING; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; TEMPERATURE RANGE 1000-4000 K; THERMAL GRAVIMETRIC ANALYSIS; TIME DEPENDENCE; X-RAY DIFFRACTION
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL ANALYSIS; CHEMICAL REACTIONS; COHERENT SCATTERING; CRYSTAL STRUCTURE; DIFFRACTION; ELEMENTS; GRAVIMETRIC ANALYSIS; MATERIALS WORKING; MICROSTRUCTURE; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; PRESSING; QUANTITATIVE CHEMICAL ANALYSIS; SCATTERING; SEMIMETALS; SILICON COMPOUNDS; TEMPERATURE RANGE; THERMAL ANALYSIS