Study of near white light emission for ZnO thin films grown on silicon substrates
Creators
- 1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China)
- 2. School of Electronic and Information Engineering, Hefei Normal University, Hefei 230061 (China)
- 3. Department of Mathematics and Physics, Anhui University of Architecture, Hefei 230601 (China)
- 4. School of Physics and Material Science, Anhui University, Hefei 230039 (China)
Description
ZnO thin films at growth time of 6, 8, 10 and 12 h were prepared by hydrothermal approach. The microstructure, surface morphology and photoluminescence properties were investigated by x-ray diffraction, field-emission scanning electron microscope and fluorescence spectrometer. The results reveal that all the thin films have hexagonal wurzite structure and preferential orientation along the c-axis. The density of nanorods increases first and then decreases with the increase of growth time. The photoluminescence spectra consist of sharp near band-edge, broad visible and near-infrared emissions. The chromaticity coordinates and color rendering indices of ZnO thin film at growth time of 10 h are x = 0.3537, y = 0.3744 and 90, respectively. The mechanisms of the green, yellow, orange-red, red and near-infrared emissions were discussed in detail. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0268-1242/27/11/115021Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductor Science and Technology
- Journal Volume
- 27
- Journal Issue
- 11
- Journal Page Range
- [5 p.]
- ISSN
- 0268-1242
- CODEN
- SSTEET
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45014139
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- DENSITY; FIELD EMISSION; FLUORESCENCE; MICROSTRUCTURE; NANOSTRUCTURES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SILICON; SUBSTRATES; SURFACES; THIN FILMS; X-RAY DIFFRACTION; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; ELECTRON MICROSCOPY; ELEMENTS; EMISSION; FILMS; LUMINESCENCE; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; SCATTERING; SEMIMETALS; ZINC COMPOUNDS