Published November 2012 | Version v1
Journal article

Study of near white light emission for ZnO thin films grown on silicon substrates

  • 1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China)
  • 2. School of Electronic and Information Engineering, Hefei Normal University, Hefei 230061 (China)
  • 3. Department of Mathematics and Physics, Anhui University of Architecture, Hefei 230601 (China)
  • 4. School of Physics and Material Science, Anhui University, Hefei 230039 (China)

Description

ZnO thin films at growth time of 6, 8, 10 and 12 h were prepared by hydrothermal approach. The microstructure, surface morphology and photoluminescence properties were investigated by x-ray diffraction, field-emission scanning electron microscope and fluorescence spectrometer. The results reveal that all the thin films have hexagonal wurzite structure and preferential orientation along the c-axis. The density of nanorods increases first and then decreases with the increase of growth time. The photoluminescence spectra consist of sharp near band-edge, broad visible and near-infrared emissions. The chromaticity coordinates and color rendering indices of ZnO thin film at growth time of 10 h are x = 0.3537, y = 0.3744 and 90, respectively. The mechanisms of the green, yellow, orange-red, red and near-infrared emissions were discussed in detail. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0268-1242/27/11/115021

Additional details

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
27
Journal Issue
11
Journal Page Range
[5 p.]
ISSN
0268-1242
CODEN
SSTEET