Published 2001 | Version v1
Miscellaneous Metadata-only

Structure characterization of the AlN layers obtained with reactive sputtering method

Creators

  • 1. Institute of Electronic Materials Technology, Warsaw (Poland)
  • 2. Forschungszentrem Rossendorf FZR, Dresden (Germany)
  • 3. Soltan Institute for Nuclear Studies, Warsaw (Poland)

Description

no abstract available

Part of:
Abstracts of 6. Polish Conference on Crystal Growth

Additional details

Publishing Information

Imprint Title
Abstracts of 6. Polish Conference on Crystal Growth
Imprint Pagination
120 p.
Journal Page Range
p. 104

Conference

Title
6. Polish Conference on Crystal Growth
Dates
20-23 May 2001
Place
Poznan (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
33034076
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
ALUMINIUM NITRIDES; BACKSCATTERING; CRYSTAL STRUCTURE; ELLIPSOMETRY; GRAIN SIZE; LAYERS; MORPHOLOGY; PLASMA; REFRACTIVE INDEX; ROUGHNESS; RUTHERFORD SCATTERING; SCANNING ELECTRON MICROSCOPY; SILICON; SPUTTERING; SUBSTRATES; THICKNESS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION
Descriptors DEC
ALUMINIUM COMPOUNDS; COHERENT SCATTERING; DIFFRACTION; DIMENSIONS; ELASTIC SCATTERING; ELECTRON MICROSCOPY; ELEMENTS; FILMS; MEASURING METHODS; MICROSCOPY; MICROSTRUCTURE; NITRIDES; NITROGEN COMPOUNDS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; PNICTIDES; SCATTERING; SEMIMETALS; SIZE; SURFACE PROPERTIES

Optional Information