Electron-beam pulse annealed Ti-implanted GaP

Gallium phosphide heavily doped with substitutional titanium is a prospective material for intermediate band solar cells. To manufacture such a material, single crystals of GaP were implanted with 120 keV Ti ions to doses between 5 × 10¹⁴ cm⁻² and 5 × 10¹⁵ cm⁻². They were next pulse annealed with 2 μs electron-beam pulses of electron energy of about 13 keV and pulse energy density between 1 and 2 Jcm⁻². The samples were studied by channeled Rutherford Backscattering, particle induced X-ray emission, and SIMS. The results show full recovery of crystal structure damaged by implantation and good retention of the implanted titanium without, however, its significant substitution at crystal sites.