Published May 7, 2014 | Version v1
Journal article

Temperature dependent Raman scattering studies of three dimensional topological insulators Bi2Se3

  • 1. Department of Physics, Indian Institute of Technology Delhi (IITD), New Delhi 110016 (India)
  • 2. Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, San Juan, Puerto Rico 00931 (United States)
  • 3. Department of Chemistry, College of Natural Sciences, University of Puerto Rico, P.O. Box 70377, San Juan, Puerto Rico 00936-8377 (United States)

Description

We investigate the temperature dependent (83 K≤T≤523 K) frequency shift of 2Ag1 and 1Eg2 phonon modes in the three dimensional topological insulator Bi2Se3, using Raman spectroscopy. The high quality single crystals of Bi2Se3 were grown using a modified Bridgman technique and characterized by Laue diffraction and high resolution transmission electron microscopy. A significant broadening in the line shape and red-shift in the frequencies were observed with increase in temperature. Polarized Raman scattering measurement shows a strong polarization effect of Ag1 and Ag2 phonon modes which confirms the good quality single crystals of Bi2Se3. Temperature co-efficient for A1g1, Eg2, and A1g2 modes was estimated to be −1.44 × 10−2, −1.94 × 10−2, and −1.95 × 10−2 cm−1∕K, respectively. Our results shed light on anharmonic properties of Bi2Se3

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
115
Journal Issue
17
Journal Page Range
p. 173506-173506.6
ISSN
0021-8979
CODEN
JAPIAU

Optional Information

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