Published November 1995
| Version v1
Journal article
Radiation damage studies of n-side silicon microstrip detectors
Creators
- 1. Imperial Coll. of Science and Technology, London (United Kingdom). Blackett Lab.
Description
The RD20 Collaboration has carried out systematic radiation damage studies of prototype silicon microstrip tracking detectors for use in LHC experiments. Results are presented for dedicated n-side test-structures showing the effect of irradiation with photons to 7Mrad and fast neutrons to 8x1013n/cm2. Both p-stop and MOS fieldplate devices were investigated, each having a range of strip geometries in order to determine optimal configurations for long-term viability and performance. (orig.)
Additional details
Publishing Information
- Journal Title
- Nuclear Physics. B, Proceedings Supplements
- Journal Volume
- 44
- Journal Page Range
- p. 475-479.
- ISSN
- 0920-5632
- CODEN
- NPBSE7
Conference
- Title
- 4. international conference on advanced technology and particle physics.
- Dates
- 3-7 Oct 1994.
- Place
- Como (Italy).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 27020055
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CAPACITANCE; INTEGRATED CIRCUITS; OPTIMIZATION; PHYSICAL RADIATION EFFECTS; POSITION SENSITIVE DETECTORS; SI SEMICONDUCTOR DETECTORS
- Descriptors DEC
- ELECTRICAL PROPERTIES; ELECTRONIC CIRCUITS; MEASURING INSTRUMENTS; PHYSICAL PROPERTIES; RADIATION DETECTORS; RADIATION EFFECTS; SEMICONDUCTOR DETECTORS
Optional Information
- Collaborations
- PRS for the RD20 Collaboration.