Published March 10, 2009 | Version v1
Journal article Metadata-only

Change in Ion Beam Induced Current from Si Metal-Oxide-Semiconductor Capacitors after Gamma-Ray Irradiation

Creators

  • 1. Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)
  • 2. College of Science and Technology, Nihon University, Funabashi (Japan)
  • 3. Sandia National Laboratories, PO Box 5800, MS 1056, Albuquerque, NM 87185 (United States)

Description

To investigate the effects of gamma-ray irradiation on transient current induced in MOS capacitors by heavy ion incidence, Si MOS capacitors were irradiated with gamma-rays up to 60.9 kGy(SiO2). The change in Transient Ion Beam Induced Current (TIBIC) signals due to gamma-ray irradiation was investigated using 15 MeV-oxygen ion microbeams. After gamma-ray irradiation, the peak current of the TIBIC signal vs. bias voltage curve shifted toward negative voltages. This shift can be interpreted in terms of the charge trapped in the oxide. In this dose range, no significant effects of the interface traps induced by gamma-ray irradiation on the TIBIC signals were observed.

Additional details

Identifiers

DOI
10.1063/1.3119985;

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1099
Journal Issue
1
Journal Page Range
p. 1014-1017
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
12. international conference on application of accelerators in research and industry
Acronym
CAARI 2008
Dates
10-15 Aug 2008
Place
Fort Worth, TX (United States)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41036866
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CAPACITORS; ELECTRIC CONDUCTIVITY; GAMMA RADIATION; INTERFACES; IRRADIATION; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SILICON; TRANSIENTS
Descriptors DEC
ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; EQUIPMENT; IONIZING RADIATIONS; MATERIALS; PHYSICAL PROPERTIES; RADIATION EFFECTS; RADIATIONS; SEMIMETALS

Optional Information

Notes
(c) 2009 American Institute of Physics