Published April 25, 2016
| Version v1
Journal article
Rashba splitting of 100 meV in Au-intercalated graphene on SiC
- 1. Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring BESSY II, Albert-Einstein-Straße 15, 12489 Berlin (Germany)
- 2. Institut für Physik, Technische Universität Chemnitz, Reichenhainer Strasse 70, 09126 Chemnitz (Germany)
Description
Intercalation of Au can produce giant Rashba-type spin-orbit splittings in graphene, but this has not yet been achieved on a semiconductor substrate. For graphene/SiC(0001), Au intercalation yields two phases with different doping. We observe a 100 meV Rashba-type spin-orbit splitting at 0.9 eV binding energy in the case of p-type graphene after Au intercalation. We show that this giant splitting is due to hybridization and much more limited in energy and momentum space than for Au-intercalated graphene on Ni.
Additional details
Identifiers
- DOI
- 10.1063/1.4947286;
- arXiv
- arXiv:1510.02291v1;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 108
- Journal Issue
- 17
- Journal Page Range
- vp.
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48036191
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- BINDING ENERGY; CLATHRATES; GRAPHENE; MEV RANGE; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; SPIN; SUBSTRATES
- Descriptors DEC
- ANGULAR MOMENTUM; CARBIDES; CARBON; CARBON COMPOUNDS; ELEMENTS; ENERGY; ENERGY RANGE; MATERIALS; NONMETALS; PARTICLE PROPERTIES; SILICON COMPOUNDS
Optional Information
- Notes
- (c) 2016 Author(s)