Published December 1987
| Version v1
Journal article
Laser simulation of single event upsets
Creators
- 1. Martin Marietta Labs., 1450 South Rolling Road, Baltimore, MD (USA)
Description
A pulsed picosecond laser was used to produce upsets in both a commercial bipolar logic circuit and a specially designed CMOS SRAM test structure. Comparing the laser energy necessary for producing upsets in transistors that have different upset sensitivities with the single event upset (SEU) level predicted from circuit analysis showed that a picosecond laser could measure circuit sensitivity to SEUs. The technique makes it possible not only to test circuits rapidly for upset sensitivity but also, because the beam can be focussed down to a small spot size, to identify sensitive transistors
Additional details
Publishing Information
- Journal Title
- IEEE Trans. Nucl. Sci.
- Journal Volume
- NS-34
- Journal Issue
- 6
- Series
- IEEE Trans. Nucl. Sci.
- Journal Page Range
- 1228-1233
- ISSN
- 0018-9499
- CODEN
- IETNA
Conference
- Title
- Annual conference on nuclear and space radiation effects.
- Dates
- 28-31 Jul 1987.
- Place
- Snowmass Village, CO (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 19085774
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTRONIC CIRCUITS; IRRADIATION; LASER RADIATION; LOGIC CIRCUITS; MOS TRANSISTORS; PERFORMANCE TESTING; PHYSICAL RADIATION EFFECTS; RADIOSENSITIVITY
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; TESTING; TRANSISTORS
Optional Information
- Secondary number(s)
- CONF-8707112--.