Published December 1987 | Version v1
Journal article

Laser simulation of single event upsets

  • 1. Martin Marietta Labs., 1450 South Rolling Road, Baltimore, MD (USA)

Description

A pulsed picosecond laser was used to produce upsets in both a commercial bipolar logic circuit and a specially designed CMOS SRAM test structure. Comparing the laser energy necessary for producing upsets in transistors that have different upset sensitivities with the single event upset (SEU) level predicted from circuit analysis showed that a picosecond laser could measure circuit sensitivity to SEUs. The technique makes it possible not only to test circuits rapidly for upset sensitivity but also, because the beam can be focussed down to a small spot size, to identify sensitive transistors

Additional details

Publishing Information

Journal Title
IEEE Trans. Nucl. Sci.
Journal Volume
NS-34
Journal Issue
6
Series
IEEE Trans. Nucl. Sci.
Journal Page Range
1228-1233
ISSN
0018-9499
CODEN
IETNA

Conference

Title
Annual conference on nuclear and space radiation effects.
Dates
28-31 Jul 1987.
Place
Snowmass Village, CO (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
19085774
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ELECTRONIC CIRCUITS; IRRADIATION; LASER RADIATION; LOGIC CIRCUITS; MOS TRANSISTORS; PERFORMANCE TESTING; PHYSICAL RADIATION EFFECTS; RADIOSENSITIVITY
Descriptors DEC
ELECTROMAGNETIC RADIATION; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; TESTING; TRANSISTORS

Optional Information

Secondary number(s)
CONF-8707112--.