Published May 16, 1983 | Version v1
Journal article Metadata-only

Electrical properties of electron-irradiated GaAs and ZnSiAs2 solid solutions

Creators

  • 1. Sibirskij Fiziko-Tekhnicheskij Inst., Tomsk (USSR)
  • 2. AN SSSR, Leningrad. Fiziko-Tekhnicheskij Inst.

Description

The effect of electron beams (2 MeV) on the electrical properties of GaAs and ZnSiAs2 solid solutions has been investigated. It was found that the electrical properties change readily at electron irradiation near room temperature. The fact that the electron bombardment leads to a decrease of the free hole concentration suggests that donor-type defects are involved during electron irradiation

Additional details

Publishing Information

Journal Title
Phys. Status Solidi A
Journal Volume
77
Journal Issue
1
Series
Phys. Status Solidi A.
Journal Page Range
K33-K36
ISSN
0031-8965

INIS

Country of Publication
Germany
Country of Input or Organization
German Democratic Republic
INIS RN
14795242
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; GALLIUM ARSENIDES; HOLES; LOW TEMPERATURE; MEDIUM TEMPERATURE; MEV RANGE 01-10; P-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; SILICON ARSENIDES; SOLID SOLUTIONS; TEMPERATURE DEPENDENCE; TRAPS; ZINC ARSENIDES
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DISPERSIONS; ELECTRICAL PROPERTIES; ENERGY RANGE; GALLIUM COMPOUNDS; HEAT TREATMENTS; HOMOGENEOUS MIXTURES; LEPTON BEAMS; MATERIALS; MEV RANGE; MIXTURES; PARTICLE BEAMS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS; SOLUTIONS; ZINC COMPOUNDS

Optional Information

Notes
Short note.