Studies of quenched-in defects and their recovery in single crystals of Al, Al-1.5 x 10-2 at% Mn, Al-3.0 x 10-2 at% In, Al-1.0 x 10-2 at% Si and Au by positron annihilation spectroscopy

Single crystals of Al, Al-1.5 x 10-2 at% Mn, Al-1.3 x 10-2 at% In, Al-1.0 x 10-2 at% Si and Au have been quenched from elevated temperatures and the quenched-in defect structures and their recovery studied by positron annihilation spectroscopy - using the Doppler-broadening technique. The results are presented in terms of lineshape parameters, S and W, based on relative areas within well-defined energy intervals at the peak and in the wings, respectively, of normalized annihilation photopeak spectra. (Auth.)