New structure of high-voltage photogenerators, transforming the concentrated solar radiation

High-voltage photo-electric generator (HPG) contains contains consistently switched microelements, based on unalloyed (plain) i-GaP substrate and performed in the form of layered GaAs/AlGaAsP heterostructure, formed by the method of liquid epitaxy. Matching AlGaAsP layer located between substrate and GaAs p-n junction and it has alternating structure, where content of phosphorus smoothly decreases from heterolimit. HPG has following features: 1-Wide-band substrate performs the function of optical window and and summary (total) thickness of absorbent layer is decreased to optima. 2-continuous (solid) ohmic layer contacts of p-r type conductivity converted to the HPG, that increases the active area of frontal later bay 15% on comparing with know analogue, and it also reduces to a minimum the influence of resistance of current spreading at high concentrations of solar flow. Principal photo-electric characteristics of HPG depending on solar flow concentration are given.(Author)