Published April 1, 1997
| Version v1
Journal article
Scanning transient current study of the I-V stabilization phenomena in silicon detectors irradiated by fast neutrons
- 1. Ioffe Physico-Technical Inst., St. Petersburg (Russian Federation)
- 2. Brookhaven National Laboratory, Upton, NY 11973 (United States)
- 3. Russian Institute of Material Science and Technology, Moscow, Zelenograd (Russian Federation)
- 4. 1. Institut fur Experimentalphysik, Universitat Hamburg, Hamburg (Germany)
Description
Investigations of the I-V stabilization phenomenon in neutron-irradiated silicon detectors have been carried out using scanning transient current technique (STCT) on non-irradiated p+-p-n+ detectors. The p+-p-n+ structure was used to simulate the p+-n-n+ detectors irradiated beyond the space charge sign inversion (SCSI). Two mechanisms partially responsible for the I-V stabilization have been identified. (orig.)
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 388
- Journal Issue
- 3
- Journal Page Range
- p. 350-355.
- ISSN
- 0168-9002
- CODEN
- NIMAER
Conference
- Title
- International conference on radiation effects on semiconductor materials, detectors and devices.
- Dates
- 6-8 Mar 1996.
- Place
- Florence (Italy).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 28050449
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTRIC CONDUCTIVITY; FAST NEUTRONS; JUNCTION DETECTORS; P-N JUNCTIONS; PHYSICAL RADIATION EFFECTS; PULSES; SI SEMICONDUCTOR DETECTORS
- Descriptors DEC
- BARYONS; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; FERMIONS; HADRONS; MEASURING INSTRUMENTS; NEUTRONS; NUCLEONS; PHYSICAL PROPERTIES; RADIATION DETECTORS; RADIATION EFFECTS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR JUNCTIONS