Published 1973 | Version v1
Book

The damage produced around ion tracks in implanted silicon

  • 1. Rome Univ. (Italy). Istituto di Fisica

Description

no abstract available

Additional details

Publishing Information

Publisher
Institute of Physics.
Imprint Place
London
ISBN
0854981063
Imprint Title
Radiation damage and defects in semiconductors
Imprint Pagination
p. 159-164.
Journal Issue
no. 16
Series
Conference series.

Conference

Title
International conference on radiation damage and defects in semiconductors.
Dates
19 Jul 1972.
Place
Reading, UK.

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
4065269
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CRYSTAL DEFECTS; DISTANCE; INDIUM IONS; ION BEAMS; ION CHANNELING; ION IMPLANTATION; IRRADIATION; KEV RANGE 10-100; PARTICLE TRACKS; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SILICON; THERMAL SPIKES
Descriptors DEC
BEAMS; CHANNELING; CHARGED PARTICLES; CRYSTAL STRUCTURE; ELEMENTS; ENERGY RANGE; IONS; KEV RANGE; SEMIMETALS