Published 1977
| Version v1
Miscellaneous
Electron microscopical observation of the radiation damage distribution in ion implanted SiO2-Si structures
Creators
- 1. Siemens A.G., Erlangen (Germany, F.R.). Forschungslaboratorium
Description
no abstract available
Additional details
Additional titles
- Augmented title (English)
- lateral damage spread
Publishing Information
- Imprint Place
- Moscow
- Imprint Title
- Preliminary programme and abstracts of papers presented at the 7. international conference on atomic collisions in solids
- Imprint Pagination
- p. 269-270.
- Report number
- INIS-mf--3996
Conference
- Title
- 7. international conference on atomic collisions in solids.
- Dates
- 19 - 23 Sep 1977.
- Place
- Moscow, USSR.
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 9364054
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- COMPARATIVE EVALUATIONS; ELECTRON MICROSCOPY; IMAGES; ION IMPLANTATION; KEV RANGE 10-100; NITROGEN IONS; POINT DEFECTS; SILICON; SILICON OXIDES; SPATIAL DISTRIBUTION
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DISTRIBUTION; ELEMENTS; ENERGY RANGE; IONS; KEV RANGE; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS
Optional Information
- Notes
- 1 fig.; published in summary form only.