Defect trapping of ion-implanted deuterium in Fe
Creators
- 1. Sandia Laboratories, Albuquerque, New Mexico 87185
Description
The trapping of ion-implanted deuterium (D) by lattice damage in Fe was investigated in the temperature range 90--500 K. The D depth profile was determined by measuring the proton yield from the 3He-excited nuclear reaction D(3He,p)4He, and the D lattice location was obtained by ion channeling. Linear ramping of the temperature produced a sharp detrapping stage at 260 K and a broader release extending over 350--450 K. The release-vs-temperature data were analyzed by solving the diffusion equation with appropriate trapping terms, yielding 0.48 and approx. =0.81 eV for the binding enthalpies associated with the two stages. The 0.48-eV trap corresponds to D at a near-octahedral interstitial site, where it is believed to be associated with a vacancy
Additional details
Publishing Information
- Journal Title
- J. Appl. Phys.
- Journal Volume
- 50
- Journal Issue
- 9
- Series
- J. Appl. Phys.
- Journal Page Range
- 5710-5719
- ISSN
- 0021-8979
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 11499351
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- CHANNELING; CRYSTAL DEFECTS; CRYSTAL LATTICES; DATA; DEUTERIUM IONS; DIFFUSION; EQUATIONS; EXCITATION; HELIUM 3; HELIUM 3 REACTIONS; ION IMPLANTATION; IONS; IRON; LOW TEMPERATURE; MEDIUM TEMPERATURE; TEMPERATURE DEPENDENCE; TRAPPING
- Descriptors DEC
- CHARGED PARTICLES; CRYSTAL STRUCTURE; ELEMENTS; ENERGY-LEVEL TRANSITIONS; EVEN-ODD NUCLEI; HELIUM ISOTOPES; INFORMATION; ISOTOPES; LIGHT NUCLEI; METALS; NUCLEAR REACTIONS; NUCLEI; STABLE ISOTOPES; TRANSITION ELEMENTS