Contributions to computer-aided interpretation of ion sputtering depth profiling

To evade some of the problems that restrict the quantification of sputtering depth profiling, i.e. the conversion of measured signal intensity vs sputtering time profiles into the concentration vs depth scale in the case of changing sputtering rate with depth, algorithms and computer programs are presented for modelling the intensity vs time by computer simulation of the measuring process. Required are only rough a priori information on the sample type under investigation, e.g. implanted material or layer systems, some knowledge of the actual sputtering conditions and basic assumptions on origin, transmission and registration of the analytical signals. The modelled profile may be adapted to the measured one by interactive, stepwise variation of parameters assumed to be important. For scanned ion beams, procedures for efficient estimation of the actual ion current density and of the changing sputtering rate with depth are also given. All calculations can be performed at a desk using any IBM compatible personal computer. (author)