Published January 2003 | Version v1
Journal article

The influence of hydrogen plasma on the electroreflectance spectrum and the spectrum of electron states of porous silicon

  • 1. Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, 03028 (Ukraine)

Description

Porous Si samples were investigated by the electroreflectance modulation spectroscopy. The presence of minibands, which are responsible for the existence of photoluminescence bands (red, green, and blue), is revealed. It is established that the miniband responsible for the blue band vanishes upon the treatment of a porous Si surface in H+ plasma. Passivation of the surface with hydrogen also leads to strain relaxation both in porous films and in the Si substrate. The origin of electron states in the band gap of Si nanocrystallites is established

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductors
Journal Volume
37
Journal Issue
1
Journal Page Range
p. 103-107
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35052806
Subject category
S36: MATERIALS SCIENCE; S70: PLASMA PHYSICS AND FUSION TECHNOLOGY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Numerical Data, Translation
Descriptors DEI
ELECTRONIC STRUCTURE; ENERGY GAP; EXPERIMENTAL DATA; HYDROGEN; NANOSTRUCTURES; PASSIVATION; PHOTOLUMINESCENCE; PLASMA; POROUS MATERIALS; SILICON
Descriptors DEC
DATA; ELEMENTS; EMISSION; INFORMATION; LUMINESCENCE; MATERIALS; NONMETALS; NUMERICAL DATA; PHOTON EMISSION; SEMIMETALS

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 37, 104-109 (No. 1, 2003); (c) 2003 MAIK ''Nauka / Interperiodica''.