Published November 1, 2017 | Version v1
Journal article

Emission properties of individual InAs/Al0.44Ga0.56As quantum dots

  • 1. Ioffe Institute, Saint Petersburg 194021 (Russian Federation)
  • 2. St. Petersburg Academic University, St. Petersburg 194021 (Russian Federation)

Description

We report on micro-photoluminescence studies of InAs/AlGaAs single self-assembled quantum dots grown by molecular beam epitaxy. A variation of the exciton fine structure splitting induced by the anisotropic part of the electron-hole exchange interaction is systematically studied depending on the exciton emission energy and the insertion of a GaAs interlayer prior formation of the InAs QDs. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/917/6/062023

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
917
Journal Issue
6
Journal Page Range
[4 p.]
ISSN
1742-6596

Conference

Title
4. International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures
Acronym
Saint Petersburg OPEN 2017
Dates
3-6 Apr 2017
Place
Saint-Petersburg (Russian Federation)