Published November 1, 2017
| Version v1
Journal article
Emission properties of individual InAs/Al0.44Ga0.56As quantum dots
- 1. Ioffe Institute, Saint Petersburg 194021 (Russian Federation)
- 2. St. Petersburg Academic University, St. Petersburg 194021 (Russian Federation)
Description
We report on micro-photoluminescence studies of InAs/AlGaAs single self-assembled quantum dots grown by molecular beam epitaxy. A variation of the exciton fine structure splitting induced by the anisotropic part of the electron-hole exchange interaction is systematically studied depending on the exciton emission energy and the insertion of a GaAs interlayer prior formation of the InAs QDs. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/917/6/062023Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 917
- Journal Issue
- 6
- Journal Page Range
- [4 p.]
- ISSN
- 1742-6596
Conference
- Title
- 4. International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures
- Acronym
- Saint Petersburg OPEN 2017
- Dates
- 3-6 Apr 2017
- Place
- Saint-Petersburg (Russian Federation)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52061062
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM ARSENIDES; ANISOTROPY; ELECTRONS; EXCHANGE INTERACTIONS; EXCITONS; FINE STRUCTURE; GALLIUM ARSENIDES; INDIUM ARSENIDES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM DOTS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; ELEMENTARY PARTICLES; EMISSION; EPITAXY; FERMIONS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INTERACTIONS; LEPTONS; LUMINESCENCE; NANOSTRUCTURES; PHOTON EMISSION; PNICTIDES; QUASI PARTICLES