Published June 1985 | Version v1
Report Restricted

Investigation of nonradiative recombination in semiconductors by photothermal displacement spectroscopy

Creators

Description

The dynamics of nonradiative recombination processes are investigated by measuring the thermal expansion and subsequent displacement of a sample surface caused by the absorption of a modulated laser beam. 6 refs., 3 figs

Availability note (English)

MF available from INIS under the Report Number; Available from NTIS, PC A02/MF A01 as DE86002882.

Files

Restricted

The record is publicly accessible, but files are restricted to users with access.

Additional details

Publishing Information

Imprint Pagination
6 p.
Report number
LBL--20190

Conference

Title
4. international topical meeting on photoacoustic, thermal and related sciences.
Dates
4-8 Aug 1985.
Place
Quebec (Canada).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
17029371
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
COPPER; EXPERIMENTAL DATA; GLASS; LASER RADIATION; MICHELSON INTERFEROMETER; P-TYPE CONDUCTORS; REACTION KINETICS; RECOMBINATION; SEMICONDUCTOR MATERIALS; SILICON; THERMAL EXPANSION
Descriptors DEC
DATA; ELECTROMAGNETIC RADIATION; ELEMENTS; EXPANSION; INFORMATION; INTERFEROMETERS; KINETICS; MATERIALS; MEASURING INSTRUMENTS; METALS; NUMERICAL DATA; RADIATIONS; SEMIMETALS; TRANSITION ELEMENTS

Optional Information

Secondary number(s)
CONF-850886--3.