Transfer doping of single isolated nanodiamonds, studied by scanning probe microscopy techniques
Creators
- 1. Physics Dept., Haifa (Israel)
- 2. Solid State Inst. Technion-Israel Institute of Technology, Haifa (Israel)
Description
The transfer doping of diamond surfaces has been applied in various novel two-dimensional electronic devices. Its extension to nanodiamonds (ND) is essential for ND-based applications in many fields. In particular, understanding the influence of the crystallite size on transfer doping is desirable. Here, we report the results of a detailed study of the electronic energetic band structure of single, isolated transfer-doped nanodiamonds with nanometric resolution using a combination of scanning tunneling spectroscopy and Kelvin force microscopy measurements. The results show how the band gap, the valence band maximum, the electron affinity and the work function all depend on the ND's size and nanoparticle surface properties. The present analysis, which combines information from both scanning tunneling spectroscopy and Kelvin force microscopy, should be applicable to any nanoparticle or surface that can be measured with scanning probe techniques. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0957-4484/25/38/385702Additional details
Identifiers
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 25
- Journal Issue
- 38
- Journal Page Range
- [7 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46082735
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- AFFINITY; DIAMONDS; DOPED MATERIALS; MICROSCOPY; NANOSTRUCTURES; RESOLUTION; SPECTROSCOPY; TUNNEL EFFECT; TWO-DIMENSIONAL CALCULATIONS; VALENCE; WORK FUNCTIONS
- Descriptors DEC
- CARBON; ELEMENTS; FUNCTIONS; MATERIALS; MINERALS; NONMETALS