Deuterium retention in tungsten in dependence of the surface conditions
Creators
Description
The paper reviews hydrogen isotope retention and migration in tungsten (W). Due to a large scatter of the deuterium (D) retention database, new measurements of ion-driven D retention in polycrystalline W foil have been performed to clarify the mechanism of hydrogen isotope inventory in W. Deuterium retention has been investigated as a function of ion fluence, implantation temperature, incident energy and surface conditions. Special attention has been given on the investigation of D retention in thin films of tungsten carbide and tungsten oxide which can be formed on W surface in a fusion device. Such kinds of films increase the D retention in W. Several points are reviewed: (i) inventory in pure W, (ii) inventory in W pre-implanted by carbon ions and (iii) inventory in tungsten oxide
Additional details
Identifiers
- PII
- S0022311502013752;
Publishing Information
- Journal Title
- Journal of Nuclear Materials
- Journal Volume
- 313-316
- Journal Issue
- 3-4
- Journal Page Range
- p. 469-477
- ISSN
- 0022-3115
- CODEN
- JNUMAM
Conference
- Title
- 15. international conference on plasma-surface interactions in controlled fusion devices
- Acronym
- PSI-15
- Dates
- 26-31 May 2002
- Place
- Gifu (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 34051024
- Subject category
- S36: MATERIALS SCIENCE; S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DEUTERIUM; INVENTORIES; ION IMPLANTATION; RETENTION; THIN FILMS; TUNGSTEN; TUNGSTEN CARBIDES; TUNGSTEN OXIDES
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CHALCOGENIDES; ELEMENTS; FILMS; HYDROGEN ISOTOPES; ISOTOPES; LIGHT NUCLEI; METALS; NUCLEI; ODD-ODD NUCLEI; OXIDES; OXYGEN COMPOUNDS; REFRACTORY METAL COMPOUNDS; REFRACTORY METALS; STABLE ISOTOPES; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; TUNGSTEN COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.