Influence of samarium on the thermal and radiation defect formation in silicon

Results of study of samarium effect on the thermal (600 deg. C; 600 deg. C +900 deg. C; 900 deg. C +600 deg. C, etc.) defect formation and radiation defect formation (irradiation by gamma-quanta 60Co) both the preliminary thermally processed and the non-processed samples were presented. Examinations were carried out with help of the following methodic: neutron activation analysis; electro conductivity, IR-spectroscopy, isothermal capacity relaxation, DLTS, etc. Samples of n-type silicon monocrystals were studied. The samples were doped with samarium and grown by the Czochralski method (with specified resistance 15 Ωcm). Influence of thermal processing on the efficiency of formation radiation defects is explaining by samarium properties both the getter and the change of silicon-oxygen and silicon-carbon solid solutions states change