Optimization of the tunnel magnetoresistance of CoFeB/ MgO/ CoFeB - based magnetic tunnel junctions (MTJs) with e-beam evaporation barriers

The investigation of MTJs with a high tunnel magnetoresistance (TMR) is very important for the production of MRAM devices. All our CoFeB layers are prepared via magnetron sputtering and MgO barriers via e-beam evaporation. We investigate the magnetic switching properties of CoFeB/MgO/CoFeB MTJs with measurements of hysteresis curves - using the magneto-optical Kerr effect - and TMR curves, optimizing the thickness of the CoFeB layers. Another parameter we change to optimize the ferromagnetic CoFeB electrodes is the annealing temperature. Both influence the solid state epitaxy leading to crystallization directly at the MgO/CoFeB interface. The optimization of MgO barrier properties is also necessary for the quality of our devices. In this context we study the TMR behaviour with the variation of the sample temperature during the e-beam evaporation of MgO barrier.