Published October 1988
| Version v1
Report
Open
Theoretical study of the interplay of electron-electron interaction and disorder
Description
A disordered Hubbard model with diagonal disorder is used to investigate the electron localization effects associated with both disorder and electron-electron interaction. Extensive results are reported on the ground state properties and compared to other theories. Two regimes have been found: when the electron-electron interaction u is greater than the disorder parameter w and when u < w. (author). 18 refs, 4 figs
Availability note (English)
MF available from INIS under the Report Number.Files
20047110.pdf
Files
(241.3 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:a277074d31cc127a6233cf563e84b1f8
|
241.3 kB | Preview Download |
Additional details
Publishing Information
- Imprint Pagination
- 14 p.
- Report number
- IC--88/291
INIS
- Country of Publication
- International Atomic Energy Agency (IAEA)
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 20047110
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BAND THEORY; CONFIGURATION INTERACTION; DOPED MATERIALS; ENERGY GAP; GREEN FUNCTION; GROUND STATES; HAMILTONIANS; HARTREE-FOCK METHOD; ORDER PARAMETERS; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- ENERGY LEVELS; FUNCTIONS; MATERIALS; MATHEMATICAL OPERATORS; QUANTUM OPERATORS