2D photonic crystals for manipulation of emission of the InGaAs/GaAs

We aim at suppressing local losses in III-V based vertical emitters by using two-dimensional photonic crystals. As a proof of principle we fabricated a hexagonal 2D photonic crystal in GaAs layers and a single InGaAs/GaAs quantum well structure. Electron beam lithography was used to define the pattern. The pattern was transferred into the specimens by wet-chemical etching. The structures obtained were characterized by atomic force microscopy and scanning electron microscopy. The luminescence of the structures with and without 2D photonic crystals is compared.