Published May 15, 2005 | Version v1
Journal article Metadata-only

Structure and magneto-optic Kerr measurements of epitaxial MnSi films on Si(111)

Creators

  • 1. Institut fuer Experimentalphysik, Freie Universitaet Berlin, 14195 Berlin (Germany)
  • 2. Institut fuer Physik, Technische Universitaet (TU) Chemnitz, 09107 Chemnitz (Germany)

Description

MnSi films are grown by evaporation of Mn onto Si(111) substrates under ultrahigh-vacuum conditions. Films are characterized with real- and reciprocal-space surface-science techniques such as scanning tunneling microscopy and low-energy electron diffraction. The bulk structure is determined ex situ by transmission electron microscopy (TEM). Thin (<60 A Mn-deposited) MnSi films show a regularly modulated surface due to a 3% lattice mismatch of the interfaces. TEM confirms epitaxial growth and demonstrates smooth, atomically flat interfaces. Temperature-dependent ex situ measurements of the magneto-optic Kerr effect show ferromagnetism with an in-plane easy axis magnetic anisotropy for 60- and 100-A-thick Mn films

Additional details

Identifiers

DOI
10.1063/1.1900934;

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
97
Journal Issue
10
Journal Page Range
p. 103913-103913.3
ISSN
0021-8979
CODEN
JAPIAU

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
37024016
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANISOTROPY; ELECTRON DIFFRACTION; FERROMAGNETISM; FILMS; INTERFACES; KERR EFFECT; LAYERS; MAGNETO-OPTICAL EFFECTS; MANGANESE SILICIDES; SCANNING TUNNELING MICROSCOPY; SUBSTRATES; TEMPERATURE DEPENDENCE; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY
Descriptors DEC
COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIELECTRIC PROPERTIES; DIFFRACTION; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; EPITAXY; MAGNETISM; MANGANESE COMPOUNDS; MICROSCOPY; PHYSICAL PROPERTIES; SCATTERING; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS

Optional Information

Notes
(c) 2005 American Institute of Physics