Oxygen distribution profiles in thin evaporated contacts on single crystal silicon

The nuclear resonance in the 16O(α, α)16O elastic scattering reaction at 3.045 MeV has been used in concentration profile measurements of oxygen in thin-film structures. The concentration profile can be deduced from an energy scan of the incoming α-particles, thus shifting the resonance to different depths in the sample. The method has been applied to studies of the structures (a) an etched Si-surface, (b) Au evaporated on Si, and (c) a Au-Ge-Si structure. Evidence is presented for the presence of oxygen in the Au layer and in the Ge layer. (Auth.)