Published September 15, 2004 | Version v1
Journal article

Electrical properties of PZT thin films grown by sol-gel and PLD using a seed layer

  • 1. Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi 110054 (India)
  • 2. Department of Physics, Indian Institute of Technology, New Delhi 110016 (India)
  • 3. Laser Science and Technology Centre, Metcalfe House, Delhi 110054 (India)

Description

Lead Zirconate Titanate (PZT) thin films (with molar ratio of Zr:Ti::65/35) were deposited by pulsed laser deposition (PLD) and sol-gel technique on Pt/Si (1 1 1), and Pt/Si (1 0 0) substrates. A seed layer of PbTiO3 (0.1 μm) was coated by sol-gel on the substrates before depositing PZT by PLD and sol-gel. A metal/ferroelectric/metal (MFM) capacitor structure, formed by depositing gold electrode on top of the film, was used for C-V and P-E measurements. A large remnant polarization (Pr = 56.8 μC/cm2) was observed on Pt/Si (1 1 1) substrates for the films deposited by sol-gel. Comparison of properties of PZT film deposited by these two techniques is discussed

Additional details

Identifiers

DOI
10.1016/j.mseb.2004.06.011;
PII
S0921-5107(04)00272-7;

Publishing Information

Journal Title
Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
Journal Volume
112
Journal Issue
1
Journal Page Range
p. 96-100
ISSN
0921-5107
CODEN
MSBTEK

Optional Information

Copyright
Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.