Published 1997
| Version v1
Report
Restricted
Evaluation of temperature-enhanced gain degradation of verticle npn and lateral pnp bipolar transistors
Creators
- 1. Aerospace Corp., Los Angeles, CA (United States). Electronics Technology Center
- 2. Vanderbilt Univ., Nashville, TN (United States). Dept. of Electrical and Computer Engineering
Description
The effect of dose rate on radiation-induced gain degradation is compared for verticle npn and lateral pnp bipolar transistors. High dose rate irradiations at elevated temperatures are more effective at simulating low dose rate degradation in the lateral pnp transistors
Availability note (English)
Available from INIS in electronic form and/or on microfiche ; Also available from OSTI as DE97004377; NTIS; US Govt. Printing Office Dep.
Files
Restricted
The record is publicly accessible, but files are restricted to users with access.
Additional details
Publishing Information
- Imprint Pagination
- 5 p.
- Report number
- SAND--97-0493C
Conference
- Title
- 34. IEEE nuclear and space radiation effects conference.
- Dates
- 21-25 Jul 1997.
- Place
- Snowmass, CO (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 29013813
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S42: ENGINEERING;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DOSE RATES; PHYSICAL RADIATION EFFECTS; TEMPERATURE DEPENDENCE; THERMAL DEGRADATION; TRANSISTORS
- Descriptors DEC
- RADIATION EFFECTS; SEMICONDUCTOR DEVICES
Optional Information
- Contract/Grant/Project number
- Contract AC04-94AL85000
- Funding organization
- Department of Defense, Washington, DC (United States).
- Secondary number(s)
- CONF-970711--3.