Capacitance-voltage profiles for semiconductor devices as radiation detectors

Capacitance-voltage (C-V) measurements of MOS devices can yield a characterizing profile as given by its characteristic curves. Sensitive parameters, such as the flat band voltage (Vfb), the voltage shift at depletion (V mg) and the voltage value at inversion (Vinv), were measured before and after irradiation. The obtained results indicated that the devices were sensitive to the absorbed gamma dose, hence, after profile calibration, such devices can be employed as radiation detectors. Also, other semiconductor devices were found to be sensitive to ionizing radiation from which are commercial diodes and light emitting diodes (LED)