Published 1988 | Version v1
Book Metadata-only

Thermal budgeting in a double level metal process with CVD tungsten as first metal

Creators

  • 1. Texas Instruments, Inc., Dallas, TX (USA)

Description

The high temperature stability of CVD tungsten interconnects over TiSi/sub 2/-clad diffusions was tested up to 7000C. A sputtered 10 wt. % Ti in W sticking layer was used to nucleate the W. Contact resistance was stable at the highest temperatures, and measured < 0.01 μohm-cm/sup 2/. Junction leakage decreased from /sup --/50 na/cm/sup 2/ to < 5 na/cm/sup 2/ upon 7000C annealing of both p/sup +//n/sup -/ and n/sup +//p/sup -/ diodes

Additional details

Publishing Information

Publisher
IEEE Service Center.
Imprint Place
Piscataway, NJ (USA)
Imprint Title
1988 proceedings of the fifth international IEEE VLSI multilevel interconnection conference
Journal Page Range
p. 212-218.

Conference

Title
5. IEEE international VLSI multilevel interconnection conference.
Dates
13-14 Jun 1988.
Place
Santa Clara, CA (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
20055727
Subject category
S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S42: ENGINEERING;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; CHEMICAL VAPOR DEPOSITION; CLADDING; ELECTRIC CONTACTS; FABRICATION; HIGH TEMPERATURE; LAYERS; LEAKS; N-TYPE CONDUCTORS; NUCLEATION; P-TYPE CONDUCTORS; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SPUTTERING; STABILITY; THERMAL DIFFUSION; THERMODYNAMIC PROPERTIES; TITANIUM SILICIDES; TUNGSTEN; VAPOR DEPOSITED COATINGS
Descriptors DEC
CHEMICAL COATING; COATINGS; DEPOSITION; DIFFUSION; ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; HEAT TREATMENTS; MATERIALS; METALS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SILICIDES; SILICON COMPOUNDS; SURFACE COATING; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS