Growth and characterization of chemical-vapor-deposited zinc oxide nanorods
- 1. Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China)
Description
ZnO nanorods were grown on Si substrates by metal-organic chemical vapor deposition (CVD). The ZnO nanorods were characterized by scanning electron microscopy, transmission electron microscopy (TEM), and X-ray diffraction. It was found that highly oriented ZnO single-crystalline nanorods were formed only on the substrate coated with a gold film. Without the gold, ZnO was deposited as a continuous film. No Au was observed on top of the ZnO nanorods, implying that the Au plays no role as catalytic metal in vapor-liquid-solid mechanism for formation of ZnO nanorods. In CVD, oriented ZnO nanorods along the c-axis were grown as a result of <111> textured Au. High-resolution TEM shows that the gold layer and ZnO are in orientation relationship of Au {111} planes//ZnO (0002) basal planes
Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2005.07.096;
- PII
- S0040-6090(05)00958-2;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 498
- Journal Issue
- 1-2
- Journal Page Range
- p. 137-141
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- 3. Asian conference on chemical vapor deposition
- Dates
- 12-14 Nov 2004
- Place
- Taipei, Taiwan (China)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37112398
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; FILMS; GOLD; LAYERS; NANOSTRUCTURES; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL COATING; COHERENT SCATTERING; DEPOSITION; DIFFRACTION; ELECTRON MICROSCOPY; ELEMENTS; METALS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; SCATTERING; SURFACE COATING; TRANSITION ELEMENTS; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.