Published 1981
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The influence of surface structures on sputtering: angular distributions from pyramid-covered single crystal copper
Creators
- 1. Research Institute of Physics, Stockholm, Sweden
- 2. Tsing-Hua University, Peking, China
- 3. Copenhagen Univ. (Denmark). H.C. Oersted Inst.
- 4. Max-Planck-Institut fuer Plasmaphysik, Garching (Germany, F.R.)
Description
The angular distribution of 40 keV argon sputtered copper has been measured. Comparison is made of the distributions from a flat surface (featureless at 10.000X) and from a pyramid-covered surface. Three different orientations of the single crystal have been used to bring the low index directions <111> <110> and <100> as well as the <11 3 1> into the plane of the collector foil. Enhanced ejections from the low index directions are seen to decrease in the order <110> <100> <111>, low index directions not in but near the collector plane can also influence the angular distributions. Generally, the total yield is higher from the pyramid-covered surface than from the flat. (Auth.)
Availability note (English)
MF available from INIS under the Report Number.
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Additional details
Publishing Information
- Imprint Pagination
- 9 p.
- Report number
- KU-HCOE-FL2-R--81-22
INIS
- Country of Publication
- Denmark
- Country of Input or Organization
- Denmark
- INIS RN
- 13662577
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- ANGULAR DISTRIBUTION; ARGON IONS; CATIONS; COPPER; EXPERIMENTAL DATA; KEV RANGE 10-100; MONOCRYSTALS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SPUTTERING; SURFACES
- Descriptors DEC
- CHARGED PARTICLES; CRYSTALS; DATA; DISTRIBUTION; ELEMENTS; ENERGY RANGE; INFORMATION; IONS; KEV RANGE; METALS; NUMERICAL DATA; RADIATION EFFECTS; TRANSITION ELEMENTS