Published June 15, 1989
| Version v1
Journal article
Useful design relationships for the engineering of thermodynamically stable strained-layer structures
Description
Recent studies have provided sufficient knowledge about the dominant failure mechanisms for lattice-mismatched strained-layer heterostuctures to permit the design of thermodynamically stable strained-layer systems for device applications. We have developed procedures that summarize this knowledge for the working device designer, and apply these relationships to the design of ion-implanted, strained-layer, quantum-well lasers
Additional details
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 65
- Journal Issue
- 12
- Series
- J. Appl. Phys.
- Journal Page Range
- 4769-4773
- ISSN
- 0021-8979
- CODEN
- JAPIA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 20053730
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DISLOCATIONS; HETEROJUNCTIONS; ION IMPLANTATION; LAYERS; SEMICONDUCTOR LASERS; SPECIFICATIONS; STABILITY; STRAINS; THERMODYNAMIC PROPERTIES
- Descriptors DEC
- AMPLIFIERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; EQUIPMENT; LASERS; LINE DEFECTS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SOLID STATE LASERS