Electrical characterization of 6H-SiC grown by physical vapor transport method

Deep level transient spectroscopy (DLTS) and capacitance versus voltage (C-V) measurements have been used to study the electrical properties of electron traps in n-type 6H-silicon carbide (SiC) grown by physical vapor transport (PVT) technique, designed as Schottky diodes. Ir Schottky- and Ni ohmic-contacts were deposited by sputtering. Current versus voltage (I-V) measurements showed that sputter deposition of the Schottky contact yields diodes with a reduced barrier height and poor rectification characteristics. Four main electron traps revealed in DLTS spectra have activation energies at 0. 39, 0.41, 0,66, and 0.74 eV below the conduction band. Based on a comparison made with electron traps reported in the literature, we conclude that three of them are well-known traps found in the as-grown or irradiated material. There was no emission signature in the literature to make such a correspondence for the trap at 0.74 eV. Strongly nonhomogenous spatial distribution with a tendency of the trap to accumulation at the surface was found by DLTS and C-V profiling. This together with the fact that the trap at 0.74 eV has not been previously reported in as-grown or processed material makes it possible that the trap is sputter deposition induced defect.