Conetronics in 2D metal-organic frameworks: double/half Dirac cones and quantum anomalous Hall effect
Creators
- 1. School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)
- 2. Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)
- 3. Department of Nuclear Science and Engineering and Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)
- 4. Department of Chemistry, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)
- 5. Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)
Description
Bandstructure with Dirac cones gives rise to massless Dirac fermions with rich physics, and here we predict rich cone properties in M 3C12S12 and M 3C12O12, where M = Zn, Cd, Hg, Be, or Mg based on recently synthesized Ni3C12S12—class 2D metal-organic frameworks (MOFs). For M 3C12S12, their band structures exhibit double Dirac cones with different Fermi velocities that are n (electron) and p (hole) type, respectively, which are switchable by few-percent strain. The crossing of two cones are symmetry-protected to be non-hybridizing, leading to two independent channels at the same k-point akin to spin-channels in spintronics, rendering 'conetronics' device possible. For M 3C12O12, together with conjugated metal-tricatecholate polymers M 3(HHTP)2, the spin-polarized slow Dirac cone center is pinned precisely at the Fermi level, making the systems conducting in only one spin/cone channel. Quantum anomalous Hall effect can arise in MOFs with non-negligible spin–orbit coupling like Cu3C12O12. Compounds of M 3C12S12 and M 3C12O12 with different M , can be used to build spin/cone-selecting heterostructure devices tunable by strain or electrostatic gating, suggesting their potential applications in spintroincs/conetronics. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/2053-1583/4/1/015015Additional details
Identifiers
Publishing Information
- Journal Title
- 2D Materials
- Journal Volume
- 4
- Journal Issue
- 1
- Journal Page Range
- [9 p.]
- ISSN
- 2053-1583
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 50044976
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ELECTRONS; FERMI LEVEL; HALL EFFECT; L-S COUPLING; NANOMATERIALS; ORGANOMETALLIC COMPOUNDS; POLYMERS; SPIN ORIENTATION; SYMMETRY; TWO-DIMENSIONAL SYSTEMS
- Descriptors DEC
- COUPLING; CRYSTAL LATTICES; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ENERGY LEVELS; FERMIONS; INTERMEDIATE COUPLING; LEPTONS; MATERIALS; ORGANIC COMPOUNDS; ORIENTATION