Published 2004
| Version v1
Miscellaneous
Properties of gate oxide using BF2+ ions for creation of drain/source areas of p-channel transistors on silicon
Creators
- 1. SNC 'TECHNOLOGICAL CENTRE', MIET (TU), Moscow (Russian Federation)
- 2. Moscow Institute of Electronic Technology (TU), Moscow (Russian Federation)
Description
no abstract available
Additional details
Publishing Information
- Imprint Title
- Abstracts of 5. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2004
- Imprint Pagination
- 257 p.
- Journal Page Range
- p. 148
Conference
- Title
- 5. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2004
- Dates
- 14-17 Jun 2004
- Place
- Kazimierz Dolny (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 36060126
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ANNEALING; BORON FLUORIDES; BREAKDOWN; CATIONS; DIFFUSION; ELECTRICAL PROPERTIES; ION IMPLANTATION; OXIDES; SILICON; TRANSISTORS
- Descriptors DEC
- BORON COMPOUNDS; CHALCOGENIDES; CHARGED PARTICLES; ELEMENTS; FLUORIDES; FLUORINE COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; HEAT TREATMENTS; IONS; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMIMETALS