Ethanol gas sensitivity of carbon nanotip arrays/n-Si heterojunctions at room temperature
- 1. College of Physics Science and Technology, China University of Petroleum, Dongying, Shandong 257061 (China)
Description
Carbon nanotip arrays were grown from silicon substrates via direct current magnetron sputtering at room temperature (RT). The simple carbon nanotip arrays/n-Si (C/Si) heterojunctions were used to detect ethanol gas at RT. The results show that the C/Si junctions have high ethanol gas sensitivity, rapid response, and high recovery speed at RT. Upon exposure to ethanol gas (0.64 g/l) at RT, the resistance of the junction decreases by 35% at a given positive voltage of 8 V. Moreover, the interface capacitance of the junction at 5 kHz can increase by about 40% rapidly when exposed to ethanol gas. The phenomena should be attributed to the change in the Fermi level of the carbon film caused by adsorbing electrons from ethanol molecules. The study shows that the C/Si junctions have potential application as ethanol gas sensors.
Additional details
Identifiers
- DOI
- 10.1063/1.3213372;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 106
- Journal Issue
- 5
- Journal Page Range
- p. 053718-053718.4
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41096357
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- CAPACITANCE; CARBON; DEPOSITION; DIRECT CURRENT; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ETHANOL; FABRICATION; FERMI LEVEL; HETEROJUNCTIONS; NANOSTRUCTURES; SEMICONDUCTOR MATERIALS; SENSORS; SILICON; SPUTTERING; TEMPERATURE RANGE 0273-0400 K; THIN FILMS
- Descriptors DEC
- ALCOHOLS; CURRENTS; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY LEVELS; FILMS; HYDROXY COMPOUNDS; MATERIALS; NONMETALS; ORGANIC COMPOUNDS; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; TEMPERATURE RANGE
Optional Information
- Notes
- (c) 2009 American Institute of Physics