Published December 1989
| Version v1
Journal article
Optical properties of localized electrons and holes in hexagonal oxide dielectrics BeO with impurities of Li, B, Al, Zn
Description
The electronic structure and partial consistence of electron and hole trapped centres [Li]0, B2+, Al2+, Zn+ in beryllium oxide are calculated by the nonempirical method of crystalline cluster. The Hamiltonian dependence on the spin orientation is taken into account. The role of these centres in UV luminescence 4.9 and 6.0 eV in BeO is discussed
Additional details
Additional titles
- Original title (Russian)
- Оптические свойства локализованных электронов и дырок в гексагональных оксидных диэлектриках. BeO с примесями Ли, Б, Ал, Зн
Publishing Information
- Journal Title
- Zhurnal Prikladnoj Spektroskopii
- Journal Volume
- 51
- Journal Issue
- 6
- Series
- Zh. Prikl. Spektrosk.
- Journal Page Range
- 997-1001
- ISSN
- 0514-7506
- CODEN
- ZPSBA
INIS
- Country of Publication
- Belarus
- Country of Input or Organization
- USSR
- INIS RN
- 21091262
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM ADDITIONS; BERYLLIUM OXIDES; BORON ADDITIONS; ELECTRONIC STRUCTURE; EXCITONS; HAMILTONIANS; HEXAGONAL LATTICES; LITHIUM ADDITIONS; LUMINESCENCE; RECOMBINATION; SOLID CLUSTERS; SPIN ORIENTATION; TRAPS; ULTRAVIOLET RADIATION; ZINC ADDITIONS
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; BERYLLIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL LATTICES; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; EMISSION; MATHEMATICAL OPERATORS; ORIENTATION; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; QUANTUM OPERATORS; QUASI PARTICLES; RADIATIONS