Electrical properties of P-MOSFETs on amorphized and regrown (110) SOI film for hybrid orientation technology
- 1. Uiduk University, Gyeongju (Korea, Republic of)
- 2. Kyungpook National University, Daegu (Korea, Republic of)
- 3. Osaka City University, Osaka (Japan)
- 4. Laboratoire d'electronique des technologies de l'information, Grenoble (France)
- 5. Grenoble Institute of Technology, Grenoble (France)
Description
A deep amorphization and solid phase epitaxial regrowth (AR) process to convert the initial crystal orientation has been investigated with the aim of co-integrating the (100) and the (110) Si surfaces on a buried oxide. P-channel metal oxide silicon field effect transistors(PMOSFETs) were fabricated on 20-nm-thick Si film silicon-on-insulator(SOI) wafers with and without the AR process. The electrical properties, such as the carrier mobility, transconductance, threshold voltage, and sub-threshold slope, were analyzed by comparing the AR-processed and the reference devices. The experimental results show that the AR process does not alter the original electrical properties of the material. Both (100)- and (110)- oriented Si films could be integrated on a continuous buried oxide.
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 60
- Journal Issue
- 10
- Series
- 7 refs, 5 figs
- Journal Page Range
- p. 1713-1716
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 45069479
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CARRIER MOBILITY; ELECTRICAL INSULATORS; ELECTRICAL PROPERTIES; EPITAXY; FABRICATION; FILMS; GRAIN GROWTH; MOSFET; ORIENTATION; SILICON
- Descriptors DEC
- CRYSTAL GROWTH METHODS; ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; FIELD EFFECT TRANSISTORS; MOBILITY; MOS TRANSISTORS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMIMETALS; TRANSISTORS