Technique for electronic measurement of semi-reduction layer using bipolar transistor of junction
Creators
- Santos, Luiz A.P.1
- Barros, Fabio R.1
- Santos, Marcus A.P.1
- Monte, David S.2
- Santos, Jose A.P.2
- Sociedade Brasileira de Protecao Radiologica (SBPR), Recife, PB (Brazil)
- Associacao Brasileira de Ensaios nao Destrutivos e Inspecao (ABENDI), Sao Paulo, SP (Brazil)
- Federacion de Radioproteccion da America Latina y el Caribe (FRALC), Rio de Janeiro, RJ (Brazil)
- 1. Centro Regional de Ciencias Nucleares do Nordeste (CRCN-NE/CNEN-PE), Recife, PE (Brazil)
- 2. SCIENTS, Recife, PE (Brazil)
Description
Recommendations of the International Commission on Radiological Protection (ICRP), the World Health Organization (WHO) and also of the International Atomic Energy Agency (IAEA) suggest equipment for X-rays diagnosis are checked for conformance to their parameters, such as Layer Semi-Reduction (CSR). The importance of verification of diagnostic radiology in parameters is because of have records that forces patients undergoing radiation doses in some clinics, up to 300% the reference values suggested by international agencies which doses are considered unnecessary, and even harmful, either because of physical or variable greatness of being out of control nominal specification, or the fact of having to repeat the radiographs. In this context, the purpose of this study was an innovative methodology that is the use of bipolar transistor junction (TBJ) to measure the aluminum CSR in diagnostic X-ray equipment beams. Although the TBJ be a device invented in the last century, only in recent years have explored their potential as X-ray sensor applied to diagnosis. The study indicates that the tested device can operating the detection of X-rays is properly polarized with electrical signals that can detect interference of the interaction of X-ray photons with the PN junction formed by the base and emitter terminals. The result of the developed technique was compared to CSR measurements obtained with detection systems standards and it was found that the BJT provides values for aluminum CSR relative errors less than 5%
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Additional details
Additional titles
- Original title (Portuguese)
- Tecnica de medicao eletronica da camada semiredutora utilizando transistor bipolar de juncao
Publishing Information
- Imprint Pagination
- 6 p.
- Report number
- INIS-BR--14933
Conference
- Title
- International joint conference Radio 2014
- Dates
- 26-29 Aug 2014
- Place
- Gramado, RS (Brazil)
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 46034409
- Subject category
- S61: RADIATION PROTECTION AND DOSIMETRY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- EQUIPMENT; IONIZATION CHAMBERS; JUNCTION DETECTORS; JUNCTION DIODES; RADIATION DETECTION; RADIATION DOSES; RADIATION PROTECTION; TRANSISTORS; X RADIATION
- Descriptors DEC
- DETECTION; DOSES; ELECTROMAGNETIC RADIATION; IONIZING RADIATIONS; MEASURING INSTRUMENTS; RADIATION DETECTORS; RADIATIONS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES