Application of size-quantized structures for studying semiconductor surface defect formation

A possibility is shown of studying defect formation under chemical, radiation and other actions on the semiconductor surface by means of size-quantized structures in which as defect indicators are used quantum heterowells near the surface. The method may be used for determining the defect region width and profile, photoelectrically active defect concentration and other characteristics of defect formation. In heterostructure GaAs/In0.3Ga0.7As is investigated defect formation under anode oxidation and argon ion irradiation of the GaAs surface