Published October 1, 1996
| Version v1
Journal article
Performance of a high resolution CdTe and CdZnTe P-I-N detectors
Creators
- 1. St. Petersburg Inst. of Nuclear Physics, Gatchina (Russian Federation)
- 2. International Atomic Energy Agency, Vienna (Austria)
- 3. Centre National de la Recherche Scientifique, 67 - Strasbourg (France). Lab. PHASE
Description
CdTe detectors exhibiting a resolution comparable to that of the early germanium detectors have been developed. With moderate cooling system using a miniature Peltier cooling, device resolution of 1 keV for the 122 keV γ-line of 57Co and 2.5 keV for the 662 keV γ-line of 137Cs has been reliably obtained. CdZnTe with high performance was investigated in the same way for manufacturing of high performance P-I-N detectors. This breakthrough in performance opens the way for many measurement applications where high resolution is required but liquid nitrogen cooling is not desirable. Devices for RFA and γ-ray spectrometric analysis of different objects, based upon the detectors, have been already created. (orig.)
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 380
- Journal Issue
- 1-2
- Journal Page Range
- p. 245-251.
- ISSN
- 0168-9002
- CODEN
- NIMAER
Conference
- Title
- 9. international workshop on room temperature semiconductor X- and gamma-ray detectors, associated electronics and applications.
- Dates
- 18-22 Sep 1995.
- Place
- Grenoble (France).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 28019339
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CADMIUM TELLURIDES; CDTE SEMICONDUCTOR DETECTORS; ENERGY RESOLUTION; GAMMA DETECTION; GAMMA SPECTROSCOPY; JUNCTION DETECTORS; KEV RANGE 100-1000; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; TRAPPING; ZINC TELLURIDES
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; DETECTION; ENERGY RANGE; KEV RANGE; MATERIALS; MEASURING INSTRUMENTS; RADIATION DETECTION; RADIATION DETECTORS; RESOLUTION; SEMICONDUCTOR DETECTORS; SPECTROSCOPY; TELLURIDES; TELLURIUM COMPOUNDS; TEMPERATURE RANGE; ZINC COMPOUNDS