Published 1995
| Version v1
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DLTS study of deep penetration defects in Si after hot iron bombardment
- 1. Institute of Semiconductor Physics, Novosibirsk (Russian Federation)
Description
Short communication
Files
28080465.pdf
Files
(21.4 kB)
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Additional details
Additional titles
- Augmented title (English)
- Deep level transient spectroscopy
Publishing Information
- Publisher
- Accademic Press.
- Imprint Title
- Ninth international conference on ion beam modification of materials. Book of abstracts
- Imprint Pagination
- 452 p.
- Journal Page Range
- p. 10003.
- Report number
- INIS-AU--0004
Conference
- Title
- 9. international conference on ion beam modification of materials.
- Acronym
- IBMM'95
- Dates
- 5-10 Feb 1995.
- Place
- Canberra (Australia).
INIS
- Country of Publication
- Australia
- Country of Input or Organization
- Australia
- INIS RN
- 28080465
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ARGON IONS; COMPUTERIZED SIMULATION; CRYSTAL DEFECTS; ION IMPLANTATION; KEV RANGE 100-1000; NEON IONS; PENETRATION DEPTH; POINT DEFECTS; SILICON; SPECTROSCOPY; TEMPERATURE DEPENDENCE; XENON IONS
- Descriptors DEC
- CHARGED PARTICLES; CRYSTAL STRUCTURE; ELEMENTS; ENERGY RANGE; IONS; KEV RANGE; SEMIMETALS; SIMULATION