Modeled I-V characteristics of heterojunction organic on inorganic Si-PEPC diode

In this article Si-PEPC (poly N. Epoxy Propyl Carbazole) heterojunction diodes were fabricated and their observed I-V characteristics as a function of temperature were modeled using a modified low band inorganic and wide band inorganic heterojunction model. The device structure was Ga/Si-PEPC/Ga, in which Ga was used for ohmic electrodes both for PEPC and Si. The temperature dependent Fermi level of p-type PEPC was first calculated and then I-V characteristics were determined. A good agreement observed between the experimental and simulated characteristics demonstrated the validity of proposed theory for the understanding of Si-PEPC heterojunction I-V characteristics as a function of temperature. Simulation revealed that Ga electrode remained ohmic with p- type PEPC to the maximum experimental temperature, which was 60 deg. C, and thus the device characteristics were controlled entirely by the heterojunction. (author)