Published June 1992 | Version v1
Journal article Metadata-only

Hole conductivity in monocrystals with metalloid excess

Creators

  • 1. Odesskij Gosudarstvennyj Univ., Odessa (Ukraine)

Description

Method of attaining high volume concentration of zinc vacancies in ZnSe crystals by their quasi-equilibrium treatment in selenium melt is suggested. The obtained experimental results confirm the suggested model of proper defects formation in zinc selenide during annealing in selenium melt. The hole conductivity of 10-2Ohm-1xcm-1 is attained

Additional details

Additional titles

Original title (Russian)
Дырочная проводимост' в монокристаллах с избытком металлоида

Publishing Information

Journal Title
Pis'ma v Zhurnal Tekhnicheskoj Fiziki
Journal Volume
18
Journal Issue
12
Journal Page Range
p. 1-5.
ISSN
0320-0116
CODEN
PZTFDD

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
24068479
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANNEALING; CHARGE CARRIERS; CRYSTAL LATTICES; CURRENT DENSITY; DIFFUSION; HOLES; MONOCRYSTALS; P-TYPE CONDUCTORS; PHOTOCONDUCTIVITY; TEMPERATURE RANGE 0400-1000 K; VACANCIES; ZINC SELENIDES
Descriptors DEC
CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; HEAT TREATMENTS; MATERIALS; PHYSICAL PROPERTIES; POINT DEFECTS; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE; ZINC COMPOUNDS