Electric Field Control of Interface Related Spin Splitting in Step Quantum Wells

Spin splitting of the AlyGa1−yAs/GaAs/AlxGa1−xAs/AlyGa1−yAs (x ≠ y) step quantum wells (QWs) has been theoretically investigated with a model that includes both the interface and the external electric field contribution. The overall spin splitting is mainly determined by the interface contribution, which can be well manipulated by the external electric field. In the absence of the electric field, the Rashba effect exists due to the internal structure inversion asymmetry (SIA). The electric field can strengthen or suppress the internal SIA, resulting in an increase or decrease of the spin splitting. The step QW, which results in large spin splitting, has advantages in applications to spintronic devices compared with symmetrical and asymmetrical QWs. Due to the special structure design, the spin splitting does not change with the external electric field. (condensed matter: electronicstructure, electrical, magnetic, and opticalproperties)